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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFK / IXFN 44 N50 IXFK / IXFN 48 N50
ID25
RDS(on)
500 V 44 A 0.12 500 V 48 A 0.10 trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol
Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 44N50 48N50 44N50 48N50
Maximum Ratings IXFK IXFN 500 500 20 30 44 48 176 192 24 30 5 500 500 500 20 30 44 48 176 192 24 30 5 520 150 -55 ... +150 V V
TO-264 AA (IXFK)
G
V V A A A A A mJ V/ns
S G
D
(TAB)
S
miniBLOC, SOT-227 B (IXFN) E153432 S
D G
S S D
W C C C C V~ V~
G = Gate S = Source
D = Drain TAB = Drain
-55 ... +150
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s
300 0.9/6 10
2500 3000
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 200 TJ = 25C TJ = 125C 400 2 0.12 0.10 V V nA A mA
Features International standard packages Molding epoxies meet UL 94 V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on) HDMOSTM process Unclamped Inductive Switching (UIS) rated Fast intrinsic rectifier
l l l l l l
l
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25
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Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls
44N50 48N50 Pulse test, t 300 s, duty cycle d 2 %
Advantages Easy to mount Space savings High power density
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IXYS reserves the right to change limits, test conditions, and dimensions.
93001I (07/00)
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(c) 2000 IXYS All rights reserved
IXFN / IXFK 44N50 IXFN / IXFK 48N50
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 22 42 8400 900 280 30 60 100 30 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 270 60 135 0.25 0.15 0.24 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 AA Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External),
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 48 192 1.5 A A V
Repetitive; pulse width limited by TJM IF = 100 A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V TBD 20
miniBLOC, SOT-227 B
250
ns C A
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXFN / IXFK 44N50 IXFN / IXFK 48N50
Fig. 1 Output Characteristics Fig. 2 Input Admittance
100 90 80 70 60 50 40 30 20 10 0
TJ = 25C
VGS = 10V
7V
100
6V
90 80 70 60 50 40 30 20 10 0
TJ = 25C
ID - Amperes
5V
0
5
10
15
20
25
30
35
ID - Amperes
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.6
TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
1.5
RDS(on) - Normalized
RDS(on) - Normalized
1.4 1.3 1.2 1.1 1.0 0.9 0 10 20 30 40 50 60 70 80 90 100
VGS = 15V VGS = 10V
2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150
ID = 24A
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
60 50
48N50
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2 1.1
VGS(th) BVDSS
BV/VG(th) - Normalized
25 50 75 100 125 150
ID - Amperes
40 30 20 10 0 -50
44N50
1.0 0.9 0.8 0.7 0.6
-25
0
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
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(c) 2000 IXYS All rights reserved
IXFN / IXFK 44N50 IXFN / IXFK 48N50
Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves
10 9
VDS = 250V ID = 24A
10000 9000 8000
Ciss
Capacitance - pF
8 I = 10mA G 7
7000 6000 5000 4000 3000 2000 1000 0
Coss Crss f = 1 MHz VDS = 25V
VGE - Volts
6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400
0
5
10
15
20
25
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Source Current vs. Source to Drain Voltage
100 90 80 70 60 50 40 30 20 10 0 0.00
TJ = 125C
ID - Amperes
TJ = 25C
0.25
0.50
0.75
1.00
1.25
1.50
VSD - Volt
Fig.10 Transient Thermal Impedance
Thermal Response - K/W
0.1
0.01 0.001
0.01
0.1
1
Time - Seconds
(c) 2000 IXYS All rights reserved
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